Characterization of the CdS films doped with boric acid developed by spraying pyrolysis method

In this study, CdS semiconductor films including various amounts of boric acid (H3BO3) and at a substrate temperatures 350° C on glass substrates were prepared obtained by spraying technique in ambient. Boric acid affect in film properties was investigated. For this, first, the structural change of the films and the affect on the film resistance was investigated. Then the contribution to the other properties of the films was examined. Using various methods and formules, the structural film parameters were calculated for different amounts of Boron at a constant temperature of the substrate. A 1 % dope of boron has been found to be an optical value for film adherence, intactness etc. Spesific resistance and Hall mobilities were calculated by Van Der Pauw Method. A direct band transition charecteristics was determined by absorption spectra, taken over the films at room temperature using (@hv)2 with hv plats. Band gap energy measured by the method was about the literature values of similar type of semiconductors. In the study a dope was found to be optimal for the expented optical, stuctural and electrical properties of the films. Characterized films are usefull particulary in the fields of photovoltaics.