Electrical, optical and structural investigation of Metal/Polyarylate/CdS/ITO hybrid thin film junctions

In this study, current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MIS Schottky diodes prepared with PAr/CdS junction and different contact metals have been investigated over voltage range of ±3V. With experimental results, rectifier feature of structure and because of the interfacial states deviations from ideal due to their conditions were observed. From the evaluation of the experimental measurements, ideality factor (n), barrier height (?B), series resistance (Rs), carrier density (NA) and interfacial state density (Nss) were calculated. When Rs and n values decrease with increasing temperature, the ?B increases with increasing temperature and significant changes were not observed in the examined temperature range for Nss and NA. Examination of gas sensing property of diode, I-V measurements were done in chloroform atmosphere and constant voltage measurements were done at different gas atmosphere. With the effect of chloroform, the resistance of diode increases and with xvi discontinuation of gas flow, diode was reverted back to its initial. Therefore, it was understood that the diode was suitable for the sensor applications.