Single crystal diamond growth with microwave plasma chemical vapour deposition system

In this study, the aim was to grow thick diamond films homoepitaxially using the microwave chemical vapor deposition system. The effect of different production methods on Seed A and Seed B substrates on the growth process was examined. Seed A substrates are produced using techniques akin to semiconductor production, involving ion implantation and the "lift-off" method. Diamond films grown using Seed A substrates exhibited higher quality, leading to a preference for Seed A in subsequent studies. The "mosaic growth" method, commonly used in the literature, was employed for all growth processes. Additionally, diamond films were grown using different CH4/H2 ratios, under constant conditions of temperature, pressure at 135 Torr, and microwave power at 5700W, for a duration of 400 hours. The impact of flow rate on the growth rate of diamonds was investigated as a result of these growth processes. The most suitable growth ratio in terms of color quality was achieved using a 6% CH4/H2 ratio. Although the fastest growth rate was attained with a 10% CH4/H2 ratio, a significant amount of polycrystalline diamond growth was observed on the crystal surface. Furthermore, for the first time in the literature, diamond substrates were grown by coating the molybdenum surface with AlTiN and TiN using the physical vapor deposition (PVD) method.