Electromagnetic response of the InAs/GaSb superlattice p-i-n photodetector structures for mid-infrared region (3-5m)

In this thesis, reflectance and transmittance of electromagnetic waves sent to thin film assembly in TE and TM modes have been investigated with the help of matrix method. In calculations, InAs/GaSb superlattice p-i-n photodetector structure was used as a thin film. Refractive indices and extinction coefficients for InAs and GaSb were calculated by using Sellmeier and Forouhi-Bloomer dispersion equations. Change in refractance in the assembly depending on the incident angle and the polarization of electromagnetic wave have been studied. The refractance variation depending on the number of layer and the amount of doping was also taken into account. Furthermore, simulations obtained with the help of calculations for polarization, angle and the number of layers have been presented.