Electrical properties of Pb1-xSnxTe/BaF2 semiconductor
2005
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Advisor: Prof. Dr. Süleyman Özçelik
Abstract (EN)
ELECTRICAL PROPERTIES OF Pbı.xSnxTe SEMICONDUCTOR (M.Sc. Thesis) Ali ihsan KİLİÇ GAZİ UNİVERSTY INSTUTE OF SCIENCE AND TECNOLOGY JANUARY 20Q5 ABSTRACT In this work, electron transport propertises in p-type PbSnTe and n-type PbSnTe semiconductor grown on BaF2 have been investigated. Conductivity, Hall mobility and carrier concentration were measured at the temperature range 44-302 K for p-type PbSnTe and 19-344 K for n-type PbSnTe. Resistivity has been analysed by using Gruneissen-BIock equation, Lineer model and power model. Hall mobility and carrier concentration's discussed experimental results. Science Code Key words Number Adviser 404.03.01 PbSnTe, Electron transport, Hall mobility, 47 Prof.Dr. Süleyman Özçelik
Author
Ali İhsan Kılıç
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Ali İhsan Kılıç (Master Thesis). Electrical properties of Pb1-xSnxTe/BaF2 semiconductor, 2005, Gazi University.
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