Electrical and optical properties of in doped ZnxCd1-xO films produced by the spray pyrolysis method

In this study, some of the electrical and optical properties of undoped and In dopedZnxCd1-xO II-VI compound semiconductor films have been investigated. The materials havebeen produced on to the glass substrates by means of the spray-pyrolysis method. The x-raydiffraction spectra of the films showed that they are polycrystalline and sphalerite orhexagonal in structure. XRD results showed that the preferred orientation of crystallitesdepends on CdO and ZnO concentration. The material have exhibited direct band gapcharacteristics with band gap values lying in the range between 2.25-3.3eV. n-type conductionhave been observed in all of the films and their I-V characteristics have shown ohmicconduction. The calculated values of conductivities of undoped and doped ZnxCd1-xO filmsvaried between 5x103-3.7x10-6( cm)-1 ve 1.2x103-4x10-3( cm)-1, respectively.Keywords: Compound Semiconductors, Spray Pyrolysis, Ohmic Conduction, Conductivity,Transparent Conducting Oxides (TCO), Optical Properties