Optimization and doping of one-step CIGSe films by RF magnetron sputtering technique

Nowadays, the development of solar cells has focused on achieving lower-cost and less complex manufacturing techniques. There are many techniques, with or without vacuum, used for CIGSe films. However, these techniques have a complex and long production process, and H2Se gas, a toxic gas, is used in most techniques. In this thesis, CIGSe, Silver (Ag) doped CIGSe, Tungsten (W) doped CIGSe, and Molybdenum (Mo) doped CIGSe films were produced using different techniques. In CIGSe films, toxic gas H2Se was not used and the production was carried out in a single step. Co-sputtering and layered production techniques were studied in Ag doped CIGSe films. In W and Mo doped CIGSe films, doping studies were carried out with layered production techniques. Optical, resistivity, structural and surface properties of all films were examined by UV/Vis Spectrophotometry, four-point probe, AFM, XRD, SEM-EDS and optical profilometer, respectively. C2-3 film from CIGSe films stood out with its low resistivity value (1.6 Ω.cm) and good crystal structure properties using single-step. In the thesis, the lowest resistivity (0.5 Ω.cm) and the highest absorption coefficient (6.1 x 104 cm-1) value together with a good crystal structure was obtained in A1-1 film from Ag doped CIGSe films using co-sputtering. In W and Mo doped films, W3 (0.6 Ω.cm) and Mo3 (0.9 Ω.cm) films, where W and Mo are used as interlayers, stood out with their low resistivity values. In this context, it was evaluated that these films are suitable for use as absorber layers in solar cells.