Production of In2S3 semiconductor film by SILAR method and investigation of some physical properties

In2S3 belongs to group III-VI semiconducting material. Because of In2S3 has a wide band gap, it is important in optoelectronics and photovoltaic device fabrication. In this study, In2S3 semiconducting films were produced by Successive Ionic Layer Adsorption and Reaction (SILAR) technique at room temperature for 40,50,60,80,100,150 and 200 SILAR cycles. X-ray diffraction patterns of films showed that they were crystallized in tetragonal and hexagonal polycrystalline forms whereas the ones produced at lower temperatures are amorphous. The as-deposited films are heat-treated at 400?C for 1 h in air. Absorption spectrums showed that they had direct band gap characteristics with the band gap values lying in between 2,27-2,98 eV.