Investigation of the effects of annealing temperature on the structural and electrical properties of P-NİO/N-TİO2 heterojection diodes

In this thesis, it is aimed to produce the p-NiO/n-TiO2 heterojunction diode structure under different annealing temperatures and to examine whether the structural and electrical properties of the diode structure change under these annealing temperatures. In line with this goal, the heterojunction structure was produced using thermal evaporation and E-Beam methods, and temperatures of 300oC, 420oC, 540oC were applied to the structures produced by thermal annealing method. Afterwards, XRD spectrum measurement, AFM measurement, I-V characteristic, ideality factor value and series/shunt resistance characteristics depending on annealing temperature were investigated. The study was concluded with the interpretation of these measurements and calculations.