A theoretical search on the effects of nitrogen and aluminium on band offset of GaNxAsyP1-x-y/AlxGa1-xP material system
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Abstract (EN)
We present a theoretical investigation of the effect of nitrogen concentration in well and aluminum concentration in barrier on band offsets of newly proposed GaNxAsyP1-x-y/GaP and GaNxAsyP1-x-y/AlzGa1-zP type I quantum well (QW) laser systems by means of using model Solid Theory and band anti-crossing model. We have calculated that the presence of nitrogen and aluminum improves the band alignment of the proposed novel material systems.Key words: Band alignment and band offset, band anti-crossing model, type Iquantum well.
Author
Mehmet Temiz
Institution
How to Cite
Mehmet Temiz (Master Thesis). A theoretical search on the effects of nitrogen and aluminium on band offset of GaNxAsyP1-x-y/AlxGa1-xP material system, 2013, Gaziantep University.
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