Investigation of the effects of high temperature processes on silicon based photodetector device performance

The goal of this thesis work is to produce photodetectors in P-I-N form by silicon substrate and to investigate effect of thermal oxidation and doping high temperature microfabrication steps of manufacturing levels of these detectors on device performance. Simulation studies were performed priorly to increase efficiency microfabrication process. Photodetector manufacturing was performed separetly by wet and dry thermal oxidation process. Gettering method was choosen for dry process. Two different p-type front surface bor diffusion process with temperature 1000 °C and 1100 °C was accomplished for doping. Adjustable owens which could heaten up to 1200 °C were used for mentioned high temperature processes. Plasma enhanced chemical vapor deposition method for dielectric coatings in photodetector production, photolithography method for shaping all patterns, plasma enhanced dry etching system for dry etching and electron beam evaporation system for metallization steps were used. Detector characterization was studied after photodetector producing. Electrochemical C-V was measured to analyze doping profiles furthermore I-V dark current and responsivity measurements of detectors were completed on prob station. According to examination of results, the diffusion profile was shallower by reducing the doping temperature and %7.8 higher responsivity performance was detected in the photodetectors produced by this method. On the other hand, %69.2 lower dark current noise density was calculated in photodetectors produced by the dry oxidation process performed with the gettering oxidation method.