GaInNAs surface emitting semiconductor lasers at 1.3 micrometer operating wavelength

In this thesis, using a well-known transmission matrix theory, the reflectance of a thin film assembly is calculated in the presence of an electromagnetic wave incident on the system. The effect of changing the number of layers and their arrangements, also the effect of their thicknesses on the reflectivity of the multilayer dielectric structure is investigated. It is examined how active layer thicknesses of the semiconductor lasers and the mode choices affect the electric field density or consequently the optical confinement factor in the active region. The calculations related to the reflectance of an assembly of thin films are used to get the emission wavelength for a surface emitting laser where the thickness of the active layer is chosen so that the field reflected from the bottom and top Bragg reflectors is in antiphase at the operation wavelength. For a structure designed like this, variation of the phase and the reflectivity spectrum against wavelength and also the change of the electromagnetic field density related to the number of top Bragg reflectors are presented by numerical simulations. Top Bragg reflectors, active layer and bottom Bragg reflectors give rise a three-layered dielectric wave-guide in a surface emitting semiconductor laser. So to get the electric field distribution in the system, asymmetric wave-guide analysis is used.