Calculation of serial resistors of Al/Coronene/n-Si Schottky diodes

Schottky based metal/organic/semiconductor structures, as a result of the development of production technologies and increasing importance with each passing day detectors, solar cells, switching elements, and microwave circuit elements have found many different uses. Control of barrier height in a metal/organic /semiconductor formation is important to design a high-performance opto-electronic circuit element. The performance and reliability of the circuit element is closely related to the geometric and electronic properties of that material in atomic dimensions. The aim of this research is: The calculation of series resistances of metal/organic/semiconductor structures by examining their electrical characteristics.According to this; n-type Si semiconductors and coated metals are firstly cleaned by different chemical methods. Al/Coronene/n-Si Organic Schottky Diode structures are formed by coating the metal and organic material (CORONENE- C24H12) on the semiconductor structure by vacuum evaporation method. Characterizations of these structures were made by electrical connection at both ends. At the application stage, diode parameters were calculated by taking I-V (Current-Voltage) measurements at room temperature with computer controlled devices. Furthermore, it was seen that it is possible to make changes in electrical properties of Schottky based Metal/Organic/Semiconductor structures by using different production methods.