Electrical characterization of Al doped ZrO2 oxide based MOS structures

In this thesis, the electrical properties of Al/ZrO2/p-Si metal-oxide-semiconductor (MOS) structures with undoped oxide interface and doped with 1%, 5%, 10% aluminum (Al) were investigated. The oxide layer was grown on p-type silicon using ZrO2 chemical bath deposition technique. Structural analysis of the pre-grown ZrO2 thin film was performed by x-ray diffraction diffractometer (XRD). Then current-voltage (I-V) measurements of all Al/ZrO2/p-Si (MOS) structures were performed at room temperature and under darkness. The diode electrical parameters were determined by utilizing the I-V measurements. Again, the series resistance effects of the structures were determined using the Norde and Cheung method from I-V measurements. The effect of Al doping is reported by comparing the determined parameters in the literature.