Measurements of inelastic differential scattering cross-section for some crystals with energy dispersive X-ray spectrometer

Measurements of Inelastic Differential Scattering Cross-Section for Some Crystals with Energy Dispersive X-Ray Spectrometer.In this study, inelastic differantial scattering cross-sections of Si and GaAs semiconductors were measured using 241Am radioisotope source emitting 59,54 keV photon at 130, 135, 140, 145 and 150 degrees. In order to determine detector efficiency, the elements Pd, In, Sm, Gd, Dy and Ho was used. The resulution of the semiconductor Si(Li) detector was found to be 160 eV at the 5,96 keV. By analysing these measurements, chemical and thickness effects to the differential cross-sections was investigated. The measured values were compared with theoretical values. Differantial scattering cross- sections were compatible with the theoretical value of Si crystals. GaAs crystals were observed for the significant differences between the theoretical and experimental values. The reasons of these differences was discussed.Key Words: GaAs, Si, Crystal Structure, Compton Scattering