Production of Au/BOD-Z-EN/n-Si/In Schottky diode and investigation of capacity-conductivity- voltage characteristics

In this thesis study, the BOD-Z-EN organic compound was synthesized with appropriate methods and the BOD-Z-EN interface layer Au/BOD-Z-EN/n-Si/In schottky diode was obtained. Au/BOD-Z-EN/n-Si/In Schottky diode frequency-dependent capacitance-frequency (C-f), conductance-frequency (G-f) measurements were made. As a result of these measurements, capacity (C) and conductance(G) value increased as the voltage value increased, and with the increased frequency value, the capacity value decreased and the conductance value increased. It was calculated that the serial resistance (Rs) value decreased with the increase in frequency value; corrected capacity and conductance values were significantly affected by serial resistance. The presence of interface states of Au/BOD-Z-EN/n-Si/In Schottky diode is determined by capacitance spectroscopy. According to the results obtained by impedance spectroscopy method, it was observed that the impedance values decreased as the frequency value increased. In the results obtained in dielectric calculations, it was determined that the ɛ' ɛ' and δ values decreased with the increase in frequency value. All these results indicate that the Au/BOD-Z-EN/n-Si/In Schottky diode acts as an MOS capacitor and can be an energy-storing device. It is shown in this thesis study that BODIPY-based compounds such as BOD-Z-EN can be used as interface layers in device applications such as electronics and optoelectronics.