Investigation of electrical and optical properties of ZnO based ultraviolet light emitting diodes

In this study the fabrication of n-ZnO/p-GaN light emitting diode (LED) was completed. The optical and electrical specifications of diod were analyzed. We expanded magnesium (Mg) doped GaN films over sapphire (Al2O3) substratum by using Metal Organic Chemical Vapor Deposition (MOCVD) technique to obtain p-type. n-type semiconductor material was obtained by using unadultered ZnO thin films. p-n junction was obtained by Sputter technique over this layer. Gold (Au) contacts were built to complete LED structure over p- type GaN and n- type ZnO layers. In this study, analysis of X-ray diffraction (XRD), determination of photoluminescence (PL) curves of ZnO, images of atomic force microscopy (AFM), electroluminescent (EL) and current-voltage (I-V) of LED were completed. Keywords: LED, MOCVD, Sputter, ZnO.