Düşük boyutlu yapıların elektrik ve optik uygulamaları

Low dimensional structures such as quantum dots have been particularly attrac-tive because of their fundamental physical properties and their potential appli-cations in various devices in integrated optics and microelectronics. This thesispresents optical and electrical applications of low dimensional structures. For thispurpose we have studied silicon and germanium nanocrystals for flash memoryapplications and InAs quantum dots for optical modulators.As a quantum dot, nanocrystals can be used as storage media for carriers in°ash memories. Performance of a nanocrystal memory device can be expressed interms of write/erase speed, carrier retention time and cycling durability. Chargeand discharge dynamics of PECVD grown nanocrystals were studied. Electronand hole charge and discharge currents were observed to differ signifıcantly andstrongly depend on annealing conditions chosen for the formation of nanocrystals.Our experimental results revealed that, discharge currents were dominated by theinterface layer acting as a quantum well for holes and route for direct tunnelingfor electrons.On the other hand, possibility of obtaining quantum dots with enhancedelectro-optic and/or electro-absorption coeffcients makes them attractive for usein light modulation. Therefore, waveguides of multilayer InAs quantum dotswere studied. Electro-optic measurements were conducted at 1.5 micron and clearFabry-Perot resonances were obtained. The voltage dependent Fabry-Perot mea-surements revealed that 6 V was suffcient for full on/off modulation. Electro-absorption measurements were conducted at both 1.3 and 1.5 micron. Since thestructure lases at 1285 nm, high absorption values at 1309 nm were obtained.The absorption spectrum of the samples was also studied under applied elec-tric field. Absorption spectra of all samples shift to lower photon energies with increasing electric field.