Deposition and characterization of nanostructural sno2 films by electrochemical deposition method

In this work, the nanostructured SnO2 films were prepared by electrodeposition method at different deposition parameters (application voltage and deposition time) on p type Si substrates. During the preparation process of SnO2 films, as the aplication voltage, -0,9 V, -1 V, -1,1V, -1,2 V and -1,3 V were used, and 15 min, 30 min, 60 min and 120 min were selected for the deposition time. SnO2 films were deposited at 70 oC. Structural, morphological and electrical characterization of films were investigated by X-ray diffraction patterns (XRD), Scanning Electron Microscope images (SEM) and resistance measurements at room temparature. XRD patterns show that the films have the tetragonal rutile type polycrystalline structure and the strongest diffraction peak belongs to (211) orientation. The best crystallization was observed at -1,1 V and -1,3 V application voltage and 120 min deposition time. Van der Pauw method was used to determine the sheet resistances of the films.