Epi̇taksi̇yel olarak büyütülen iii-v nanoyapilarin elektron mi̇kroskopi̇ i̇le karakteri̇zasyonu

Epitaxially grown III-V group semiconductor nanostructures have been investigated by means of electron microscopy techniques. Particularly, InAs/GaSb type-II superlattice (SL) structures designed as infrared photodetector and InAs/GaAs self-assembled quantum dots (QDs) have been analysed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) techniques. Structures used in this study were grown by molecular beam epitaxy (MBE) and extensively characterized for their structural properties such as layer thicknesses, interface properties, surface qualities and compositional properties. The same imaging techniques have also been used for surface characterization of GaSb epilayers and observation of both InAs and AlSb QDs. The acquired results have shown that undesired features and defects evidenced on the surfaces of the epilayers grown under different conditions can be avoided once proper actions are taken. Also, a significant amount of work in this study has been devoted to develop an effective, reproducible and reliable cross-section sample preparation recipe for the studied material systems.