The effect of NiO thickness on electrical properties of the NiO/n-Si heterojunction structures

In this study, heterojunction structures were carried out by deposition of NiO thin films on n-Si substrates according to different coating times by sol gel spin coating method. The effect of thin film thickness on electrical and optoelectrical properties of heterojunction structures was investigated. The crucial electrical parameters such as series resistance (Rs), rectification ratio (RR), ideality factor (n) and barrier height (ΦB) of heterojunction structures were calculated by analyzing I-V data. The current-voltage (I-V) characteristics of the fabricated heterojunction structures were investigated under dark and different illumination intensities. All structures were shown to be photo sensitive and exhibit a rectification behavior. While the ideality values of the diodes varied between 3.29 and 7.05, the barrier heights varied between 0.67-0.76 and the series resistance values between 270-4436.