Deposition and characterization of cdpbs thin films doping with different Pb ratios

In this thesis, some characteristic properties of Cd1-xPbxS (0 ≤ x ≤ 0,175) films obtained by chemical spraying method were examined. Cd1-xPbxS films were produced on glass substrates by chemical spraying using CdCl2, Pb(NO3)2 and CS(NH2)2 salts at 450 oC substrate temperature. Structural, optical and electrical properties of Cd1-xPbxS films were investigated. The band gap energy values were found in the range of 2,38-2,44 eV with the help of optical measurements. By adding different density Pb atoms to the CdS structure, reductions in the band gap energy ranges of the films were observed. At the same time, as the Pb ratio in the structure increased, the optical transparency of the material decreased due to increasing x values. The crystal structures of the films were examined with the help of X-rays. It was determined from the XRD results that the films have hexagonal structure. The resistivity values of the thin films were measured in light and dark by the four-point method. The resistivity values under the light ranged from 0,37x106 Ω · cm to 16,87x106 Ω · cm, and the dark resistivity values ranged from 0,72x106 Ω · cm to 22,2x106 Ω · cm. Based on electrical measurements, the material was found to be sensitive to light. Cd1-xPbxS thin films produced by chemical spraying were exposed to ultraviolet rays for 90 minutes, and then the experiments were repeated and changes in the band gap energy and resistivity values of the films were investigated. It is seen that the properties of CdS films used as solar cell material change with Pb doping.