Characterization of zno films by sol–gel method using different solvents and electronic device applications

In this work, Zinc Oxide (ZnO) films have been prepared on p-Si substrates by sol gel method using spin coating technique with three types of solvents. The effects of the different solvents on the structural, and morphological properties of the ZnO films have been investigated. XRD patterns showed that all of the ZnO films exhibited hexagonal crystal structure. The crystallite size (D), lattice parameters (a, c) and texture coefficient (TC) values for the ZnO films have been calculated. The morphological properties of the films were investigated by FESEM images. According to the structural and morphological characteristics, the best ZnO films were selected and p-Si/ n-ZnO heterojunction diodes were fabricated. Electrical characteristics of these diodes have been investigated. From the I-V results of the heterojunction diodes, the ideality factor (n) and barrier height (b) have been calculated. Serial resistance (Rs) and barrier height of these diodes (b) were calculated using Norde method. It is shown that the interface states between metal and semiconductor and serial resistance shows an important factor on the electrical parameters of heterojunction diodes.