F-doped CdO semiconductor compounds produced by spray pyrolysis

In this study, CdO semiconductor films with different fluorineconcentrations have been produced at 250ºC substrate temperature on to the glasssubstrates by the spray pyrolysis method. X-ray diffraction spectra of the filmshave shown that the films so formed are polycrystalline and cubic NaCl instructure. CdO:F films have been determined to have direct band gapcharacteristics with the band gap values lying in the range between 2,45 and 2,94eV by using optical method. The type of the electrical conductivity of all filmshave been determined to be n-type characteristic by using hot probe method. Theohmic conduction mechanisms have been observed in the current-voltagecharacteristics of the films. The calculated values of the resistivity of the filmshave been found to lie between 3,63x10-6 and 1,30x10-5 ohm.m.Keywords: Compound semiconductors, transparent conducting oxides, spraypyrolysis, ohmic conduction, fluorine doped cadmium oxide