GaN HEMT teknolojisini kullanan iki aşamalı geniş bant AB sınıfı yüksek güçlü amplifikatör tasarımı

Modern radio systems need broadband, high efficiency power amplifiers to cover a wide frequency spectrum with reliable system performance. Linearity is another critical parameter in power amplifier design and there is a trade-off between linearity and efficiency. Class-AB design presents a compromise in terms of linearity and efficiency for the radio frequency systems. In this thesis, two-stages broadband high power amplifier design using GaN HEMT technology is presented. Simulations and measurements are based on the transistor models provided by the manufacturer. The design has minimum 43 % power added efficiency (PAE) and 47.3 dBm output power over the 0.5 - 2.5 GHz operating frequency.