Dark current analysis in GaSb/InAs superlattice structures

In this thesis, we searched that how effective band gap and electron miniband gap change with related to well and barrier layer thickness and dark current which under low reserve bias conditions is discussed for how to change with the voltage dependent for GaSb/InAs superlattice structure. Band energies are obtained with using the codes which prepared in the Mathematica software based on Kronig-Penney model for thickness calculations. Separetaly, cut off frequency and effective band gap changes are investigated by changing the GaSb and InAs thickness. Afterwards, we searched that if the results are compatable with literature. PN junction, which is occur as a result of doping GaSb/InAs structure with n type and p type, explained on which mechanisms impact to dark current and dark current change studied for low reserve bias voltages.