Wide band gap hot electron lasing and light emission in semiconductor heterostructures

In this work, multiple quantum well structure of InGaN/GaN is investigated as a device utilizing Hot-electron Light emission and Lasing In Semiconductor Heterostructures (HELLISH). A heterojunction structure is designed based on active InGaN quantum well placed in the n-type GaN region sandwiched by the n- and p-type GaN layers. Four quantum well structure of InGaN/GaN heterojunction where the Indium ratio is 0.16, has been fabricated via Metal Organic Chemical Vapor Deposition in Universty of Ihsan Doğramacı Bilkent, Nanotechnology Research Center (NANOTAM). The other stages of the device fabrication have been realized in the of Advanced Lithography Laboratories/Istanbul University Science Faculty Physics Department. In order to create an anisotropic potential distribution of the heterojunction, it is aimed to fabricate InGaN/GaN THH devices along two different directions in Top-Hat HELLISH (THH) geometry. The characterizations of devices have been performed in Nano-Optoelectronic Research Laboratories/Istanbul University Science Faculty. In this thesis, it is presented the results of I-V, photovoltaic, and electroluminescence characteristics of the Light Emitted Diode structures within the THH devices. The parameters such as working voltage, emission power, and wavelength of emitted radiation has been obtained. Besides, it is determined the parameters, i.e., working electric field, wavelength-dependent electroluminescence based on the acquired current-electric field, electric field-emission power characteristics, and electroluminescence spectrum. Here, it is presented a comprehensive analysis of measurements and device characteristicsother similar devices presented in the literature.