Investigation of grown SB-based III-V group semiconductor structures for solar cell and laser applications

Highly efficient multi-junction solar cells that minimise thermalisation and transparency loss in III-V group photovoltaic technologies are making remarkable progress in space and aerospace applications. Recent research has been focused on the use and integration of GaSb as a subcell to make the use of the infrared region in these technologies. On the other hand, the need for the hybrid integration of electronic and photonic components on the same chip for high-speed and multipurpose systems is rapidly increasing. To make the superior electronic and optoelectronic applications of III-V group semiconductors more functional and cost effective, their integration with Si technology is one of the most important approaches in the future projection of the technology. Sb-based ternary and quaternary alloys are one of the III-V group materials of interest in the development of specialized device technologies. The ability to tune the energy band gap with alloy concentration offers flexibility in the design and fabrication of quantum heterostructure devices. It is therefore important to understand the growth mechanisms of GaSb-based alloys and investigate their properties through characterization studies. In the first section of this study, GaSb single-junction solar cells were fabricated and characterized on GaSb and Si substrates. An energy conversion efficiency of 1.20% was obtained from the GaSb solar cell grown on GaSb substrate. In the second section, the epitaxial growth of AlAsSb and InGaAsSb/AlGaAsSb materials grown using molecular beam epitaxy is discussed. The structural properties of alloys with different growth parameters were experimentally investigated, and optimization processes were carried out based on the experimental results.