Production of In2o3 semiconductor film by spin coating method

this study, In2O3 films which belong to transparent conducting oxides have been produced by sol gel spin coating technique on glass substrates. By changing each parameters of spin coating technique, the conditions of the best film that produced were determined. At the last step of production films were produced at 375 oC, 425 oC and 475 oC heat treatment temperature. To investigate the physical properties of In2O3 semiconductor films, some properties of the produced films have been investigated. Thickness of the In2O3 films have been measured by ellipsometry technique. X-ray diffraction studies showed that the samples have polycrystalline nature and the increasing of heat treatment temperature improves the structural properties of the films. Optical properties have been investigated of the highly transparent semiconductor In2O3 films and films were found to have a direct band gap structure. Increase of heat treatment temperature from 375 oC to 475 oC, it was obtained that the optical band gap value almost stays the same. The optical band gap energies of the In2O3 samples from the absorption spectra have been calculated 3.48 eV and 3.49 eV. The surface topography of the films have been examined by field emission scanning electron microscope. In those images characteristic crystal structure of films was observed.