Investigations of some physical properties of CDS semiconductor films obtained by chemical bath deposition method and effects of annealing process

In this thesis study, semiconductors CdS films have been produced onto glass substrates and flourine tin oxide substrate by the chemical bath deposition method. CdS films produced onto glass substrates were annealed respectively at 250oC, 300oC, 350oC and 400oC. Then effect of annealing has been investigated on the physical properties of CdS semiconductor films, optical, structural, morphological properties of the produced films have been researched and thickness of CdS films have been measured by ellipsometry technique. X-ray diffraction patterns of CdS films revealed that samples have polycrystalline structure. Optical properties of the samples have been examined and it is found that CdS films have direct band gap. Transmittance values of films have been decreased until 350oC, but at 350oC and 400oC transmittance values increased. Morphological properties of CdS films have been investigated, it is observed that increasing of annealing temperature had positive effect on CdS films at 350oC and 400oC. By hot-probe technique it has been determined that CdS/FTO structure has n-type conduction. By way of obtained circuit-voltage characteristics, mobility and electrical conductivity of FTO/n-CdS structure has been calculated.