Electrical characterization of cobalt doped copper oxide thin film based structures

In order to fabricate heterojunction structurers, undoped and cobalt-doped copper oxide thin films were deposited on n-type silicon substrates by sol-gel spin coating method. The optoelectrical properties of these heterojunction structures were investigated. As a result of the measurements, the effect of cobalt doping on the produced thin films based structures were studied. The I-V measurement of these structures were examined in the dark and under 100 mW/cm2 light intensity. The ideality factor (n), barrier height (ΦB) rectification ratio (RR) and series resistance of these diodes were calculated by using the conventional Thermoionic Emission and Norde methods. In addition, C-V, Rs-V, G-V and Dit graphs were plotted and analyzed in the frequency range of 10 kHz – 1 MHz. The electrical parameters of these structures such as Nd (cm-3), Vbi (eV), Nc (cm-3), Ef (eV), Փb(C-V) (eV), Wd (nm), ∆Փb (eV) and Emax (V/cm) were calculated by using capacitance data, which was measured under 1 MHz frequency. As a result of the electrical measurement of heterostructures, it was observed that all electrical parameters were strongly dependent on the doping concentration.