Investigation of structural and optical properties of silicon surfaces prepared by the dry etching technique

In this study, validity of only one of the two proposed mechanisms to explain the formation mechanism of Ammonium Silicon Fluoride-ASF {(NH4)2SiF6} films -grown on Si substrates which are exposed to the vapour of a HF-HNO3 mixture- is tested via the Winkler method by investigating whether oxygen comes out as a reaction product.As a result of observing that ASF films exhibit efficient Photoluminescence (PL), temperature-dependent PL properties of the films are investigated and luminescence around 2-2.2 eVs is observed. It is also observed that the laser beam used as the excitation source affects the PL properties of the films. Besides, PL properties of samples synthesized by varying the Si substare's duration of exposure to acid vapor are compared. According to the FTIR measurement results of ASF films exposed to laser light for specified periods, it is found that laser light causes no chemical modifications. Through electron microscope investigations of ASF films prepared at various exposure periods, it is determined that particle size varies between 0.5 and 2 ?m.