Capacity voltage spectroscopy of schottky structures made by using laser paint

In this study, n-type Si (Phosphorus-doped) semiconductor crystals grown with Czochralski technique, cut in a (100) oriented silicon crystal have been used with a thickness of 380μm and 20Ω-cm resistivity. These crystals have been cleaned with different chemical methods. The spin coating technique has been used to deposit coronene thin films on cleaned semiconductor crystals. Semiconductor crystals formed with coronene thin films have been put into the vacuum environment of approximately 10-6 torr. Metals (99.999%) have been evaporated on thin film coated surfaces to create rectifier contacts. The electrical connections have been made to both sides of Schottky based metal/organic/semiconductor structures and characterization processes have been performed in dark place and at room temperature. Capacity-voltage (C–V)) measurements have been performed as characterization process. From these measurements the diode parameters have been calculated such as barrier height (Φ_B), diffusion potential (V_d), depletion layer width (W_D), Fermi energy level (E_F), carrier densities (N_d), Schottky lowering (∆Φ_B) and maximum electric field (E_m).