Investigation of boron nitride production with luminescent properties

Today, luminescent materials are used in many fields such as optoelectronicmaterials, solar panels, light emitting diodes (LEDs), quantum dots. They can be obtained by doping rare earth elements (RE) into the structure of wide bandgap semiconductor materials. Among these materials, hexagonal boron nitride has attracted attention with its chemical, physical and mechanical properties. In this study, hexagonal boron nitride (hBN) was obtained by doping different amounts of dysprosium (Dy3+) and europium (Eu3+) ions. Luminescent hBN was synthesized by mixing boric acid, melamine, Eu3+ and Dy3+ and dried at 1200 °C for 1 hour under nitrogen atmosphere. The samples were characterized and their photoluminescence (PL) properties were investigated. When boron nitride was excited with UV light, the presence of Eu3+ and Dy3+ ions led to blue to red emission. The formulation with the highest energy efficiency was determined using different [Dy3+/Eu3+] ratios. The emission with the highest energy efficiency (~0.83) was observedat with the ratio of [Dy3+/Eu3+] = 0.5. It was also observed that the luminescence intensity decreased with increasing amount of Dy3+ ions.