Linear and nonlinear optical properties of GaAs quantum dot with topological defect in magnetic field and aharonov bohm field

In this study, general information is provided about semiconductors, low-dimensional semiconductor systems, nonlinear optics, the Aharonov-Bohm effect, and topological defects. Then, the potential parameters, defect parameters, applied magnetic field, and effects of the Aharonov-Bohm flux on the linear, nonlinear, total absorption coefficient, and refractive index changes of the GaAs quantum dot structure with a disclination defined by parabolic and inverse square well potential are theoretically examined. Numerical calculations were performed using the linear, nonlinear, and total absorption coefficient and refractive index change equations obtained with the energy eigenvalues and eigenfunctions obtained for the GaAs quantum dot. with disclination defect The obtained numerical results are presented as a function of photon energy. It is anticipated that these numerical results will contribute to the design of optoelectronic devices by being compared with the results of relevant experimental studies.