Modeling a thin-film transistor (TFT)

In this thesis, we studied the working principles and modeling the static current – voltage characteristics of a Thin Film Transistor (TFT). TFTs are extensively used in flat panel displays for switching the pixels. We first analyzed the characteristics of Amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs, and reviewed the analytic models to estimate the static electrical behavior of the TFTs in general and the a-IGZO TFT, in particular. We developed a new analytical model for predicting the static electrical behavior of the a-IGZO TFTs and for analyzing and simulating the new electrical circuits when these transistors are used to form new circuits. Finally, we compared the predictions of this model with the measured data and other models.