Structural characterization of nano-sized vanadium oxide thin films after annealing

In this thesis, investigated structural characterisation with infrared uncooled termal detector material vanadium oxide thin films. Vanadium oxide shows semiconductor to metal transition with 680 C. It is used in microelectronic devices, sensors, microelectromechanical systems (MEMS) and optoelectronic systems. Vanadium oxide thin film produced with different thickness 20,100 and 150 nm O2/Ar rates and substrates SiO2 and SiN. Pulse DC magnetron sputtering technique used with sputtering process. Secondary heat treatment proceess used with electrical chracteristic regulation of thin films. Required electrical properties of termal sensors are 105-106 Ω resistance and more than 2 %/°C TCR rate. In this thesis produced one sample have 1 x 106 Ω resistance and -3,5 %/°C TCR rate and try to decrease resistance of thin film used with secondary heat tratment process. Four point probe(FPP) technique used with electrical characterisation,X-ray difraction,X-ray reflectometry and micro Raman spectroscopy techniques used with structural characterisation of thin films.