Magnification of NİO, NiCr2O4 and α-Fe2O3 thin films, characterization and investigation of gas sensor properties of NiO thin films

In this study, NiO thin films were grown on glass and silicon by applying different partial pressures of oxygen such as 2,4%, 6,4% and 9,8% by RF Magnetron Sputtering (RF magnetron sputtering) magnification technique. The effect of the obtained NiO thin films on optical absorption, XRD measurements, and SEM and AFM images of oxygen, films, optical and electrical properties was investigated. Next, the gas sensor properties of NiO thin films with Hall and I-V measurements at room temperature were investigated in the hydrogen gas environment at different concentrations. In the second phase of the study, triple compound Nickel-Chromium Oxide (NiCr2O4) semiconductor thin films were grown on glass and silicon by applying different oxygen partial pressures of 5,56%, 8,19% and 12,83% with RF magnetron sputtering Technique to Optical Absorption, XRD Van-der Pauw measurements at room temperature, Raman change charts, SEM and AFM images. At the last stage of the work, thin films with hematite (α-Fe2O3) film were obtained by chemical spraying method. Next, elements such as Al, Cd and Ga were doped into iron III oxide (α-Fe2O3) by chemical sputtering method and nickel oxide (NiO) thin films were grown on it by using RF Magnetron Sputtering magnification technique. Optical absorption, XRD, SEM and AFM images were obtained.