Capacitance-voltage measurements in nitride based nano semiconductors

In this thesis, capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements have been made in InN and Ga1-xInxNyAs1-y samples at room temperature. Samples were grown at Crete University (Greece) and LAAS-CNRS (France) using Molecular Beam Epitaxy (MBE) growth system.InN bulk samples with thicknesses 1.08, 2.07 and 4.7 ?m were grown at Crete University and undoped with nitrogen content 1% and 0.4%, n-type Si-doped with nitrogen content 1.5% and p-type Be-doped with nitrogen content 1.5% Ga1-xInxNyAs1-y quantum well samples were grown at LAAS-CNRS. Capacitance-voltage (C-V) measurements were performed at 1MHz and depth dependent carrier concentrations were evaluated from these datas. Capacitance-frequency (C-f) measurements were performed at different applied voltage. Electrical properties of samples were investigated with these measurements.Keywords: Capacitance-Voltage (C-V), Capacitance-Frequency (C-f), Schottky and Ohmic Contac, Carrier Concentration.