THE EFFECT OF INTERFACE STATES ON ELECTRICAL CONDUCTION OF ORGANIC COMPOSITED SCHOTTKY DIODES

In this thesis work, Schottky diodes have been produced with and without organic compound and examined the electrical variations of basic parameters comparatively. For this, a metal/organic/inorganic structures have been formed by coating a thin organic interface layer on p type silicon substrate. Coronene organic compound has been used as an interface layer and this material has been formed on p type silicon substrate as a thin film by using spin coating technique. The ohmic and rectifier contacts have been performed by thermal evaporation method and the voltage dependent capacitance and conductance measurements of structures have been realized at room temperature and in a dark environment. By means of obtained data from the measurements the basic diode parameters of both structures have been examined using different techniques. Both structures have been showed the Shottky type behaviour. The organic compound interface layer have been decreased the current and capacitance values but increased the series resistance of the structures. The dispersion profiles of energy dependent interface states have been exponantial increased from midgap band to the edge of valance band level. The trap densities of the structures with organic compound have been detected as low level than the structures without organic compound. It has been concluded that the organic interface layer has been successfuly pasivated the silicon surface.