Electrical and interfacial properties of the Al/Safranine T/n- type InP MIS junctions with organic dye interlayer

In this study, the [100] direction is enlarged in a thickness of 300 µm, the donor concentration 1-5x1017cm-3,and a face-polished n-InP semiconductors was used.After appropriate chemical cleaning process,the semiconductor crystal of the lower face funny In contact was made .Methanol upper face Safranine T dye solution (0.2%) is covered with the organic layer to the upper surface of the lower contact was made. Manufactured Al/ST/n-InP Schottky diodes electrical and surface properties at room temperature in the dark and the light, under the current-voltage (I-V) in the frequency range 100-900 kHz with 100 kHz steps measurement and capacitance-voltage (C-V) and conductance-voltage their properties were investigated. The barrier height (ΦB) and series resistance (Rs), some parameters such as, plain feed, the I-V data were obtained from Cheung functions and modified using the Norde function.Diode interface state density (Nss) were also calculated. The resulting structure has the characteristics of a perfect rectifier.