Preperation of organic based photodiodes and examination of optoelectronic properties under illumination

In this study, BOD-Pyr organic material was grown as thin film on the n-type Si substrate by using the spin coating method. The main electrical characteristics of the produced Au/BOD-Pyr/n-Si/In Schottky diode at room temperature, in the dark and under illumination, examined by I / V measurements and the series resistance values were examined by using the Cheung & Cheung method. As a result of the investigations, the ideality factor and barrier height were found as 2,84 and 0,751eV, 1,55 and 0,871eV respectively under darkness and 100 mW/cm2 illumination intensity. The increase in illumination intensity leads to a decrease in the ideality factor and an increase in the barrier height. Series resistance values were found as 5019 Ω and 2671 Ω under darkness and 100 mW/cm2 illumination intensity, respectively. Finally, the diode has open circuit voltage and short circuit current values of 0,26 V and 0,017 mA under 100 mW/cm2 illumination intensity. When these results were taken into consideration, it was observed that the produced Au/BOD-Pyr/n-Si/In Schottky diode was photovoltaic and sensitive to light.