PIN foto diyot sensörlerinin üretimi ve karakterizasyonu

p-type, intrinsic, n-type (PIN) photodiodes with active areas of 3.5 x 3.5 mm2, 5.0x5.0 mm2, and 7.0x7.0 mm2 were fabricated using the conventional photolithography method on a 6 inch (100) intrinsic silicon wafer with a surface resistivity of 2.4 kΩ - 2.8 kΩ at 500 μm thicknesses. n and p regions were formed using the phosphorus (POCl3) and boron (BBr3) doping at 950 °C via thermal diffusion method. As expected for the capacitance – voltage (C-V) characteristic of the fabricated PIN photodiodes decreases exponentially with the reverse-biased voltage. The capacitance of each PIN diode reached a fully depleted point at -5V. The capacitance was measured at the fully depleted point as the order of pF. The dark current-voltage (Id-V) characteristics of the PIN diodes were measured at room temperature in the reverse biased. Thanks to the structure of the PIN diodes, they have worked on high voltages without breakdown. However, due to the effects of high voltage and the effects of silicon temperature dependency, the dark current is observed in µA at breakdown voltage. At lower voltages, the dark currents drop to nA. Silicon PIN photodiodes, which are produced according to the results of quantum efficiency and spectral responses, can detect wavelengths between 380 nm and 1100 nm and have reached maximum efficiency at 810 nm wavelength. The fabricated PIN diodes can be used in optoelectronic applications.