Zinc selenite (ZnSe) of thin films production with radio frequency (RF) sputtering method

Zinc Selenide (ZnSe) which the table in the second (II) group with zinc in the fourth (IV) group formed by the coming together of the elements selenium. ZnSe has a high bandwidth due to the optics, solar energy, sensors are used in materials, particularly blue-green laser diode applications. In this study, Radio Frequency (RF) ZnSe semiconductor thin films were produced by sputtering method. Production time some of ZnSe thin films produced by changing the optical and surface properties and ability to work hard by keeping systems examined were studied to determine the differences resulting from the different system power. The structural properties of thin films produced ZnSe, thickness, optical transmittance, the refractive indices for the analysis of surface images and surface roughness X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), Uv-Vis Spectrophotometer and the Interferometric measuring device is used. Key Words: ZnSe, Radio frequency (RF) sputtering, ZnSe thin films, Optic and structural properties