Characterization of metal/insulator/semiconductor (MIS) structured devices with nanocellulose crystal (CNC) interface

In this study, Al/CNC/p-Si (MIS) structure was obtained by applaying cellulose nanocrystal (CNC) insulating meterial to the metal/semiconductor interface. First of all, the nanocellulose allocated for analysis studies; dynamic light scattering spectrometry (DLS), zeta potantial, ultraviolet and visible light (UV-Vis) absorption spectroscopy, raman spectrometry and scannig transmission electron microscopy (STEM) analyzes were performed. Then the electrical characterization of the obtained Al/CNC/p-Si (MIS) structure at room temperature and in the dark was carried out by current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V results, the ideality factor (n) was calculated as 1.72 and the barrier height (B) was calculated as 0,8 eV. The fact that the calculated ideality factor is higher than the required ideality factor is attributed to the deviation from ideality due to the presence of the CNC interface film between Al/p-Si and the interface state distributions, as well as the high series resistance of the neutral region of the p-Si semiconductor layer. In addition, the series resistance (Rs) effect of the structure was also taken into account; Rs was calculated by Norde and Cheung method. Finally, from the (C-V) measurements of Al/CNC/p-Si (MIS) structure; Frequency-dependent (C-V) and conductivity-voltage (G-V) changes were examined. All results were interpretd by comparing them with the literature. In conclusion; Cellulose nanocrystal (CNC) insulator meterial is a potantial insulator meterial that can be usedin electronic device applications.