Investigation of structural-electrical property relationship of Sİ3N4/TİALV thin film materials

Recently, it has been seen that imaging in the Terahertz band has different advantages and has started to be used in security applications. However, these systems are still not widely used due to their limited sensitivity and high cost. A metal thin film with a high absorption capacity in the infrared region cannot be used efficiently due to its high reflection coefficient in the Terahertz region. In order to fully exploit the potential of plasmonic effects occurring at the metal/dielectric interface, especially in thin metallic films, novel material systems need to be developed. In this project, it is aimed to increase the sensitivity to absorption with metal/dielectric active medium thin film systems that will be developed specifically to operate in the Terahertz region. The aim of this thesis is to investigate the thickness-dependent structural, electrical and terahertz optical properties of TiAlV metal alloy thin films. In this context, the terahertz absorption performances of alloy TiAlV thin films at the metal/dielectric interface were determined. In addition, the effects of thin film production parameters, which are thought to be critical for terahertz applications, on the structural and terahertz optical characteristics were investigated. TiAlV thin film alloy system was grown using DC magnetron sputtering technique with different production parameters and different thicknesses. The resulting results gave important results about the use of metallic TiAlV thin films in THz applications