Production of ZnO semiconductor film by SILAR method and investigation of some physical properties

In this work, ZnO semiconducting films belonging to the II-VI group have been produced by SILAR (Successive Ionic Layer Adsorption and Reaction) method on glass substrate with 5, 7, 10, 20, 25 and 30 cycles. The x-ray diffraction of the films showed that they are hegzagonal (wurtzite) in structure. Grain size of ZnO semiconductor films varied between 15,46 ? 19,80 nm accordingly with the number of SILAR cycles. The material has exhibited direct band gap transition with the band gap values lying in the range between 3,13 ? 3,21 eV. Absorbation edge is red shift in thicker films. Transmission percents of ZnO semiconductor films varied between % 18 to % 67 accordingly with the number of cycles.