The growing of doped and undoped Mn3O4 semiconductor thin films by SILAR method and characterization

In this study, copper (Cu) and zinc (Zn) doped undoped Mn3O4 thin films were grown on the glass substrate using by SILAR method at room temperature. Cu and Zn dopant were doped in Mn3O4 thin film at 0.1%, 0.2% and 0.3%, separately. The optical, structural, morphological and hydrophilic properties and effects of these thin films are systematically investigated by UV-Vis spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), raman spectrometry, scanning electron microscopy (SEM) and water contact angle (WCA) measurements. It is observed that the band gap of Cu-doped Mn3O4 thin films decreased from 2.09 eV to 1.71 eV with the increase in Cu dopant concentration and the band gap of Zn-doped Mn3O4 thin films decreased from 2.09 eV to 1.73 eV with Zn dopant concentration by UV-Vis spectroscopy measurement. XRD measurements showed that the crystal sizes of Cu-doped thin films firstly decreased and then increased with increasing Cu doping rate and the crystal sizes of Zn-doped thin films the decreased with increasing Zn doping rate. At the same time, it has been found that thin films have tetragonal Hausmannit structure with XRD measurements. Raman measurements showed that Cu and Zn doped and undoped Mn3O4 thin films have Hausmannite structure. SEM measurements showed that the surface morphology of undoped Mn3O4 thin films changed significantly with Cu and Zn dopant. The SEM images of thin films showed that the thin films have nanowall structure which are important structures for supercapacitor applications. WCA measurements showed that all thin films are a hydrophilic.