Performance comparison of silicin (Si) and silicon carbide (SiC)semiconductors in boost converter application

Silicon (Si) based semiconductors are commonly used as switching elements in power electronics circuits. However, Si based semiconductors have approached their theoretical limits, and advancements in this field have slowed down. Recently developed wide-bandgap Silicon Carbide (SiC) semiconductors have started to replace Silicon (Si) semiconductors due to their characteristics of low losses, high electrical breakdown strength, and high-temperature tolerance. In this study, a 1kW boost converter was designed. Efficiency values were obtained in the 10-60 kHz switching frequency range using Si and SiC-based semiconductor switches with equal current and voltage ratings in the designed converter. The experimental values were compared with simulations in LtSpice, and after confirming that the results matched, efficiency and semiconductor losses were measured in the 10-200 kHz switching frequency range using LtSpice. The measurements were used to compare efficiency, size, and cost. Despite the high cost of SiC semiconductors, the overall converter cost was found to be lower, with higher efficiency and energy density.