Characterization of ti(IV) doped zno based dilute magnetic semiconductor nano powders and thin films synthesized by the sol-gel method

In this study, Ti(IV)-doped ZnO-based dilute magnetic semiconductor (DMS) nanostructured powders and thin films were successfully synthesized using the sol-gel method. Nanopowders and thin film samples were prepared under controlled annealing conditions (600 °C, 30 minutes) using different solvents (MEA and 2-propanol). The thin films were deposited onto glass substrates via the dip-coating technique. This thesis investigates the effects of doping and solvent selection on the structural, morphological, mechanical, optical, magnetic, and electrical properties of ZnO. Structural analyses revealed that Ti ions were successfully incorporated into the ZnO crystal lattice without inducing any secondary phase formation, thereby preserving the crystal structure. SEM images showed that Ti doping led to significant changes in particle morphology and surface roughness. Mechanical analysis indicated that samples prepared with MEA exhibited superior hardness and elastic modulus, whereas those prepared with 2-propanol showed higher fracture toughness. Magnetic measurements clearly demonstrated that Ti doping induced ferromagnetic behavior in ZnO, with strong and distinct ferromagnetic properties observed particularly at 4% and 5% Ti doping levels. Optical analyses revealed a decrease in transmittance with increasing Ti content, although this effect was minimal at specific doping levels (e.g., Ti2). Electrical measurements showed that the sample with 2% Ti doping exhibited the highest carrier concentration, with a renewed increase trend at 4% and 5% doping levels. In conclusion, Ti(IV) doping significantly enhanced the optical, magnetic, and electrical performance of ZnO while preserving its structural integrity, especially within the 2–4% doping range. These findings highlight the promising potential of Ti-doped ZnO nanomaterials for use in advanced dilute magnetic semiconductor applications and other high-technology fields.